Absolute determination of cross sections for resonant Raman scattering on silicon

We studied the resonant Raman scattering of x rays in the vicinity of the K absorption edge of silicon. The investigation was carried out at the plane grating monochromator beamline for undulator radiation of the PTB laboratory at BESSY II in Berlin. Cross sections were determined absolutely for a wide energy range of incident photons with small relative uncertainties employing calibrated instrumentation avoiding any reference samples. The experimentally determined values differ clearly from the theoretical ones found in the literature.