Demonstrates high-precision target center localization in semiconductor manufacturing, suggesting enhanced measurement capabilities.
Achieving high-precision overlay target center localization is critical for image-based overlay (IBO) metrology in advanced semiconductor manufacturing. This paper proposes a novel IBO target localization algorithm based on symmetry center matching. Leveraging the symmetry design of the IBO optical system as a physical prior, the algorithm reformulates center localization as a global correlation optimization problem. The grayscale projection profile of a single-sided edge is extracted, spatially mirrored, and used as a reference template for sliding correlation matching against the opposite edge. The symmetry center is then determined from the peak of the Pearson correlation coefficient curve. Simulation results demonstrate a center localization accuracy better than 0.00013 pixels (3σ), with repeatability precision remaining within 0.012 pixels (3σ) under stringent noise and blur conditions. Experimental validation yields object-space repeatability precision of 0.129 nm (3σ) and 0.144 nm (3σ) in the X and Y directions, respectively, surpassing the 0.32 nm measurement uncertainty requirement for advanced process nodes. The average single-frame processing time is approximately 0.07 s, demonstrating that the proposed algorithm simultaneously satisfies the demands of high precision and high throughput.
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Liu et al. (2026) studied this question.
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