It is shown that the role of valley degeneracy is essential in enhancing the Hartree interaction terms over the exchange terms and thereby causing different critical transport properties in doped semiconductors. We predict, following the arguments of Kaveh, that for uncompensated many-valley semiconductors, the critical conductivity exponent is v = ½ and the critical exponent for the dielectric constant is 2v = 1.
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Kaveh et al. (1987) studied this question.
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