Theoretical studies of the applications of resonant tunneling diodes as intersubband laser and interband excitonic modulators

We present a theoretical analysis of the optical applications of resonant tunneling diodes. The electronic properties are calculated with a self-consistent traveling-wave model that includes effective-mass mismatches. The interband optical properties are calculated from a 4×4 k⋅p band structure in the dipole approximation. We find that it is possible to operate a conventional device as an intersubband laser if the transition energy is large (∼0.5 eV) and the linewidth in minimal (∼5 meV). A bound-state device can produce a modulation ratio of 5:1 at the excitonic peak with an absorption length of ∼ 40 μm in a waveguide geometry.