Conductance has been studied in metal-oxide-silicon field-effect transistor accumulation-layer samples in which it is possible to constrict the channel to small dimensions both perpendicular to the surface and perpendicular to the channel. A temperature-dependent conductance σ=σ₀exp[-(T₀T)ⁿ] is observed, where n=1/2 for small channel widths and n=1/3 for larger channel widths. It is believed that this behavior arises from a transition from one-dimensional to two-dimensional variable-range hopping in the sample.
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Fowler et al. (1982) studied this question.
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