We have measured surface stresses on clean Si(111) 7×{}7 by comparing this surface to a reference surface on which gallium atoms are adsorbed under UHV conditions. Stresses are determined by optically measuring the macroscopic strain induced in thin samples. We find a surface stress of 2.37 eV/(1×{}1 cell) for Si(111) 7×{}7, and a stress in the range 0.90--1.09 eV/(1×{}1 cell) for the Si(Ga) (111) superlattice associated with one monolayer Ga coverage. Comparison with theory suggests that our technique will be a powerful tool to measure equilibrium stresses in atomically clean surfaces.
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Martinez et al. (1990) studied this question.
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