High performance X-band LNAs using a 0.25 μm GaN technology

This work presents two LNAs, referred to in the following as LNA A and LNA B, respectively operating in the 8-10 GHz band and 10-12 GHz band; together they cover the full X-band. The power consumption results very low, being equal to 0.9 W for each amplifier. The total area for each LNA is 3.0×1.5 mm 2 . A very low noise figure has been achieved, namely of 1.1 dB (LNA A) and 1.3 dB (LNA B). The peak gain is 27 dB (LNA A) and 25 dB (LNA B). The obtained results mark an increase in performance for the 0.25 μm GaN technology in terms of noise figure, gain and matching, improving the current state of the art of GaN-based LNAs.