The variation in the electron carrier concentration as a function of annealing conditions in HgSe, Hg1−xMnxSe, and Hg1−xFexSe has been studied. Our results show that the carrier concentration in the Hg1−xFexSe system with x≥0.003 is very stable and shows little or no change under various annealing conditions. Measurements of the Dingle temperature from Shubnikov–de Haas oscillations, in addition to Hall mobilities determined at 4.2 K, indicate a significantly longer collision time for the conduction electrons in Hg1−xFexSe for x<0.03 than in samples of HgSe with the same electron concentration.
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Vaziri et al. (1985) studied this question.
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