The optimal input impedance and noise of a DC SQUID RF amplifier at frequencies of the order of 1 GHz with a resonant input matching circuit have been studied analytically, numerically, and experimentally. A model for noise temperature and power gain has been developed for the practical resonant input tank circuit. A new effect of the output noise increasing or decreasing with changing the sign of voltage-to-flux transfer coefficient has been observed experimentally and explained analytically. The different values of noise temperature for the opposite dV/d/spl Phi/ values have been interpreted using a model with partially correlated current and voltage noise sources. The equivalent layout for optimal input matching of a SQUID amplifier comprising series and parallel resonant circuits has been presented. Using such a matching circuit and SIS junction as a signal source the SQUID amplifier noise temperature about 1 K has been measured at 1.1 GHz.
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Tarasov et al. (1996) studied this question.
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