Electromigration in thin films of aluminium and aluminium alloys is shown to lead to stepwise increases of the electrical 1/f noise. These are attributed to the generation of highly mobile defect configurations by a nucleation-and-growth process. It is conjectured that among them may be the defects that are responsible for the eventual failure of VLSI electronic devices by electromigration damage. 1/f noise promises to be an early indicator of this damage.
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Dagge et al. (1996) studied this question.