We describe the results of a photoluminescence study of quantum dots which are formed by interface fluctuations in narrow GaAs/AlAs single quantum wells. The photoluminescence measurements were made with lateral spatial resolution ranging from the macroscopic down to the optical near-field regime. For spatial resolution below a few square microns the photoluminescence from individual quantum dots is resolved. Photoluminescence excitation spectroscopy is used to study the excited state spectrum of an exciton bound in a single quantum dot.
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Gammon et al. (1995) studied this question.
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