Surface phonon dispersion relations have been measured by He-atom inelastic scattering for in situ cleaved GaAs(110). Besides the expected Rayleigh mode and a mode at 13 meV at the Brillouin-zone boundary a third mode with a wave vector independent energy of 10 meV has been observed. This finding is very similar to our recent results for the reconstructed Si(111) (2 × 1) surface. In both cases the observations are unexpected for the presently accepted surface structures.
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Harten et al. (1987) studied this question.
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