Hf0.5Zr0.5O₂/HfO₂/Hf0.5Zr0.5O₂ laminated thin films and CF₄ plasma passivation for improved memory and synaptic characteristics of ferroelectric field-effect transistors

ratio increased from 4 to 7, the asymmetry value decreased from 4.68 to 3.44, and the number of states rose from 75 to 100. Lastly, through MNIST dataset-based accuracy simulation, the proposed device achieved an inference accuracy of 80%, representing a 10% improvement over the pristine device. These findings suggest that the simultaneous utilization of FE lamination and plasma treatment can be a knob for developing high-performance FeFET-based analog synapses, advancing their potential in memory and neuromorphic computing technologies.