Switching and Charge Trapping in HfO₂-based Ferroelectric FETs: An Overview and Potential Applications

Ferroelectric field-effect transistor based on ferroelectric hafnium oxide emerges as a promising technology for nonvolatile memory. This work provides an overview on its main switching properties under various pulsing schemes and emphasizes the significant voltage-time trade-off underlying the polarization reversal. A striking difference in switching between the large- and small-area devices is presented. The parasitic charge trapping is pointed out as a severe reliability limitation and a de-trapping method is shown. Finally, possible applications beyond memory are discussed, including neuromorphic, stochastic and logic-in-memory devices.