Answers are grounded in this paper and cite their sources.
High-quality, submicrometer Nb/AlOx /Nb Josephson junctions were fabricated. The junction area was defined by anodizing an upper Nb electrode using a thin SiO2 mask. By utilizing the anodized Nb as an etch stop during the reactive ion etching of the contact hole in an SiO2 insulator, we could make a junction smaller than the contact hole size. Using stress-free Nb for the junction electrodes was crucial in achieving good current-voltage characteristics. High-quality Nb/AlOx /Nb junctions as small as 0.7 μm square were produced. The quality parameter Vm was greater than 30 mV for a jc of 6800 A/cm2.
No takes yet. Share an insight, caveat, or question.
Imamura et al. (1988) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: