The electrical modulation of the magnetoresistance (MR) from −70% to 80% under a small magnetic field of 200Oe near room temperature is found in multi-p-n heterostructures of SrTiO3−δ∕La0.9Sr0.1MnO3∕SrTiO3−δ∕La0.9Sr0.1MnO3∕Si we fabricated. The mechanism causing the modulation of MR by applied bias is proposed as the interface competition effect in the multilayer heterojunctions. Our results of the present structure are expected to meet the high desire for the application of large electronic modulation of MR near room temperature.
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Zhao et al. (2008) studied this question.
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