Resonator-Assisted Active Phonon Extraction Architecture for Trapped-Ion Quantum Processors

We introduce a six-layer monolithic chip architecture that integrates classical driven resonator-assisted sideband cooling into trapped-ion quantum processors. A high-Q superconducting LC resonator (Nb/NbTi, Q_int ≳ 10⁵) acts as a narrowband, low-noise delivery circuit for a classical RF tone at the red motional sideband. Dedicated inner coupling electrodes enable conservative red-sideband Rabi frequencies of 50–200 kHz for typical RF amplitudes (50–100 V). Time-domain master-equation simulations show that this approach extracts phonons from realistic initial occupations (¯n ≈ 5) down to ¯n = 0.0008 within 200 µs, achieving a net cooling rate of ~25 000 phonons/s even in the presence of 50 phonons/s anomalous heating. A corrected Johnson–Nyquist noise budget demonstrates that internal quality factors Q_int ≳ 10⁴ keep added heating below 0.1 phonons/s. The resonator operates in pulsed or between-gate mode to maintain compatibility with high-fidelity gate execution. The design provides continuous (or near-continuous) phonon management without optical recooling, enabling improved gate fidelities (>99.99%) and scalable modular QCCD processors connected via photonic links. Full Python scripts for 3D electrostatic simulations and time-domain dynamics are included.