Flexible HfxZr1-xO₂ Thin Films on Polyimide for Energy Storage With High Flexibility

Flexible energy-storage capacitor has attrac- ted great interest on account of the rapid development of the combination of intelligent systems and flexible electronics. In this work, we fabricated flexible energy-storage capacitors by depositing Hf x Zr 1-x O 2 thin films on polyimide (PI) substrates using atomic layer deposition (ALD). The flexible capacitors exhibit high energy storage density (ESD <tex-math notation="LaTeX">≈ 35.4 </tex-math> J/cm 3 ) and efficiency ( <tex-math notation="LaTeX">η ≈ 69.3 </tex-math> %). Furthermore, ESD and <tex-math notation="LaTeX">η </tex-math> remained stable even bending 5000 cycles with a radius of 2 mm. This work provide reference for the development of high-performance flexible HfO 2 -based energy storage devices.