We have successfully developed a robust ReRAM true random number generator, using current difference, that does not require extra chip area. True random numbers are guaranteed by the current difference in the 1/f β noise generated by Brownian motion, as tested using a fractional SDE model and verified using 1/f β noise distribution. A highly reliable 40-nm ReRAM true random number generator circuit was designed and passed NIST SP800-22 randomness tests across all combinations of voltage (VDD ± 0.1 V) and temperature (-40 to 125 °C). The random number throughput achieves 32 Mbps with a low power consumption of 0.04 nJ/bit.
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Wei et al. (2016) studied this question.
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