The Silicon Carbide (SiC) based devices will become the mainstream in the motor drive technology in the near future. These next generation power devices give benefits of lower losses, higher voltage, and high temperature operation in the power conversion system, realizing its downsizing and high power density. The winding change over technique, on the other hand, is useful to extend the speed control range with high efficiency of ac motors. This paper describes the effects of using high power SiC MOSFET and SiC SBD, together with the electronic winding changeover technique in the EV motor drives.
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Takatsuka et al. (2014) studied this question.
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