Two-dimensional reciprocal space mapping with high-resolution x-ray diffraction has been used to characterize the strain in as-grown and annealed Sb-doped Si. Si(100) layers with Sb concentrations 1×1019–3×1021 cm−3 were grown by molecular-beam epitaxy at a growth temperature of 310 °C. High-resolution transmission electron microscopy has been applied to determine the critical thickness for epitaxial growth, growth morphology, and defect structure. The critical thickness for low-temperature epitaxial growth decreases with increasing Sb concentration from ∼1000 Å for CSb≊2×1020 cm−3 to ∼25 Å for CSb≊2×1021 cm−3. Following the defect-free epitaxial layer was a (100)-oriented layer with stacking faults and facets to the final amorphous phase. The strain in as-grown Si layers increased with increasing Sb concentration CSb up to 1×1021 cm−3. The thermal stability for concentrations above 2×1020 cm−3 was poor, resulting in Sb precipitation. The lattice expansion obtained due to Sb-doping in Si was β=5.4×10−24 cm3 atom−1. Electrical characterization of the samples showed that doping concentrations ≤4×1020 cm−3 could be obtained.
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Radamson et al. (1994) studied this question.