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It will be shown in this paper that as a consequence of high-field stress on thin SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> films (70-200Å), two types of charges are introduced into the oxide. Their spatial distribution and formation mechanisms are first investigated. Then the phenomenon of electron trap generation owing to high-field stress is discussed. Experimental techniques and special precautions for seperating the effects of the two types of charges will also be described. The effect of these charges on a floating gate E 2 PROM cell has been described elsewhere (1) and will not be repeated.
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Jeng et al. (1981) studied this question.