What question did this study set out to answer?

To implement compound-semiconductor ULTRARAM nonvolatile memory on a silicon substrate to evaluate its feasibility for scalable, cost-effective mass production.

January 5, 2022Advanced Electronic MaterialsOpen Access

ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon

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To implement compound-semiconductor ULTRARAM nonvolatile memory on a silicon substrate to evaluate its feasibility for scalable, cost-effective mass production.
Synthesized III–V memory epilayers on a silicon substrate using molecular beam epitaxy, starting with an aluminum antimonide (AlSb) nucleation layer and a gallium antimonide (GaSb) buffer layer.
Fabricated 10 and 20 µm single-cell memory devices featuring a floating gate accessed via a triple-barrier resonant tunneling heterostructure.
Assessed switching speed, energy consumption, retention, and endurance under program and erase pulses of ≈2.5 V.
Fabricated 10 and 20 µm devices demonstrated clear 0/1 logic-state contrast following program/erase pulses of ≈2.5 V at durations of ≤10 ms.
Switching energy per cell size was orders of magnitude lower than conventional dynamic random access memory and flash memory due to low voltage and minimal capacitance per unit area.
Devices sustained degradation-free endurance exceeding 10^7 program/erase cycles and demonstrated nonvolatile data retention projected beyond 1000 years.

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Implication

Experimental study demonstrates low-energy nonvolatile ULTRARAM memory on silicon with millisecond switching and 1000-year retention, indicating potential for cost-effective mass production.

Cite This Study

Hodgson et al. (2022) studied this question.

synapsesocial.com/papers/6a15aae079ff98d0de4ef6ff https://doi.org/10.1002/aelm.202101103

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Implication

Experimental study demonstrates low-energy nonvolatile ULTRARAM memory on silicon with millisecond switching and 1000-year retention, indicating potential for cost-effective mass production.

ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon

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Implication

Cite This Study

ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon

Key Points

Discussion

Implication

Cite This Study

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