High‐Efficiency, Microscale GaN Light‐Emitting Diodes and Their Thermal Properties on Unusual Substrates

A method for forming efficient, ultrathin GaN light-emitting diodes (LEDs) and for their assembly onto foreign substances is reported. The LEDs have lateral dimensions ranging from ∼1 mm × 1 mm to ∼25 μm × 25 μm. Quantitative experimental and theoretical studies show the benefits of small device geometry on thermal management, for both continuous and pulsed-mode operation, the latter of which suggests the potential use of these technologies in bio-integrated contexts. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.