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Metal thin-film deposition, over the Cr2O3 surface of CrO2 thin-film substrates, exhibits a redox reaction at the interface. The transition metal forms an oxide in combination with the reduction of the near-surface chromium oxide to Cr2O3. The insulating barrier layer Cr2O3 increases with the formation of Pb3O4 in Pb/Cr2O3/CrO2 and CoO in Co/Cr2O3/CrO2 junctions, respectively.
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Cheng et al. (2002) studied this question.
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