The 3D double-layer vertical RRAM with ultralow sub-μA operating current and high self-rectifying ratio over 10 3 has been demonstrated for the first time. This Ta/TaO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> /TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> /Ti interfacial switching device overcomes the intrinsic trade-off between operating current and variability in filamentary RRAMs and shows promising potential for high-density data storage.
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Hsu et al. (2013) studied this question.
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