Tuning contact properties in MoSi2N4 van der Waals heterostructures with Janus metals: Realizing Ohmic contacts

Shiying Guo; Siqi Yang; Ying Wang; Chen Zhuang; Han Li; Jing Pan

doi:10.1039/d6cp01003b

January 1, 2026Physical Chemistry Chemical Physics

Tuning contact properties in MoSi2N4 van der Waals heterostructures with Janus metals: Realizing Ohmic contacts

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Key Points

The aim is to enhance charge transport properties in 2D MoSi2N4 heterojunctions through tuning contact characteristics.
Utilized Janus metals to modify contact properties.
Evaluated Schottky barrier height and carrier tunneling probability.
Assessed charge transport performance in van der Waals heterostructures.
Achieved low Schottky barrier heights leading to improved charge transport.
Demonstrated high carrier tunneling probability, enhancing electrical performance.
Realized ohmic contacts critical for efficient charge conduction.

Implication

Demonstrates improved charge transport in 2D semiconductors with Janus metals, indicating enhanced electrical properties.

Abstract

Low Schottky barrier height and high carrier tunneling probability are key figures of merit for charge transport at two-dimensional (2D) semiconductor heterojunctions. 2D MoSi2N4, with high carrier mobility and excellent...

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Cite This Study

Guo et al. (2026) studied this question.

synapsesocial.com/papers/6a168b280c924ddd1bd5a187 https://doi.org/10.1039/d6cp01003b

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Tuning contact properties in MoSi2N4 van der Waals heterostructures with Janus metals: Realizing Ohmic contacts

Key Points

Implication

Abstract

Discussion

Cite This Study

Tuning contact properties in MoSi2N4 van der Waals heterostructures with Janus metals: Realizing Ohmic contacts

Key Points

Implication

Abstract

Discussion

Cite This Study

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