Gap‐Seeded Nucleation of Single Ag Nanoparticles for Filamentary Memristors

Filamentary Ag memristors are at the forefront of next‐generation artificial neuromorphic networks. However, their fabrication routinely involves multiple lithography steps and vacuum techniques, driving processing complexity and length. In this study, we explore a lateral memristor structure consisting of an Ag‐based filamentary memristor on a SiO 2 surface. A new, aqueous Ag nanoparticle (NP) nucleation technique is used for simplified memristor fabrication. The synthesis is an adaptation of an electroless metal deposition process used in microelectronic interconnect fabrication. Lithographically structured Pt gaps act as nucleation seeding sites, where single nanoparticles selectively grow. The resulting particles on the chip were then conditioned via an electromigration process to perform filamentary memristor operations. Operation voltages below 0.5 V and reproducible cycling are demonstrated. The location on a surface makes them ideal for sensing the environment. The responsivity to changes in the ambient was showcased by the broad influence of atmospheric humidity on the memristive hysteresis, enabling global gating strategies in future neuromorphic circuits.