High‐Performance Air‐Stable Bipolar Field‐Effect Transistors of Organic Single‐Crystalline Ribbons with an Air‐Gap Dielectric

High-performance bipolar OFETs are fabricated using single-crystalline sub-micrometer-sized ribbons of CuPc and F16CuPc and the technique of an air-gap dielectric. Their similar energy levels to the work function of the Au electrodes, the high mobility of their single crystals, and the great advantages of the air-gap dielectric result in a high performance of the bipolar devices. The devices show excellent air-stable characteristics with electron and hole mobilities as high as 0.17 and 0.1 cm2 V−1 s−1, respectively.