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The DX center concentration in Al x Ga 1- x As which depends on composition and hydrostatic pressure has been calculated, based on a model wherein the donor level which is associated with the L conduction band forms the DX center. The calculation shows good agreement with the results of observation. The present model can be applied to a similar center observed in GaPAs. The possibility of DX center formation in other III-III'-V and III-V-V' ternary alloy systems has also been pointed out.
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Tachikawa et al. (1985) studied this question.
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