Self-consistent electronic structure calculations are reported for Al at two interstitial locations in silicon. On the basis of these calculations, a novel mechanism for enhanced interstitial migration is proposed in which electron capture can cause a barrier lowering appreciably greater than EG, the energy gap. The model and the present numerical results are in good agreement with recent measurements by Troxell et al.
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Baraff et al. (1983) studied this question.
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