Key points are not available for this paper at this time.
Self-consistent electronic structure calculations are reported for Al at two interstitial locations in silicon. On the basis of these calculations, a novel mechanism for enhanced interstitial migration is proposed in which electron capture can cause a barrier lowering appreciably greater than E₆, the energy gap. The model and the present numerical results are in good agreement with recent measurements by Troxell et al.
Baraff et al. (Mon,) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: