We report avalanche photodiodes with a "centered-well" multiplication region that have achieved high gain, low noise, and low dark current. The multiplication region consists of an ∼80 nm-thick Al 0.2 Ga 0.8 As layer sandwiched between two thin (10∼20 nm) layers of Al 0.6 Ga 0.4 As. Monte Carlo simulation shows the beneficial effect of spatial modulation of the ionization rates in this structure compared to homojunctions.
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Wang et al. (2003) studied this question.
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