A model for silicon RAPD’s, which have an n+–p–π-p+ structure and are fabricated by using the ion-implantation techniques for forming the p layer, is studied. Useful relations for both an excess noise factor and a temperature dependence of an avalanche breakdown voltage are derived and are found to be in good agreement with experiments. The diodes discussed are useful in optical communication systems because of a relatively low operating voltage for the higher quantum efficiency.
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Kaneda et al. (1976) studied this question.
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