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January 31, 2014IEEE Transactions on Electron Devices

Analytical Modeling of Capacitances for GaN HEMTs, Including Parasitic Components

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AZAixi ZhangLZLining ZhangZTZhikai Tang

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Zhang et al. (2014) studied this question.

synapsesocial.com/papers/6a17d7633aabde875b13005fhttps://doi.org/10.1109/ted.2014.2298255
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