AlGaN/GaN HFETs and silicon MOSFETs have been integrated monolithically on a silicon 〈111〉 substrate. A differential heteroepitaxy technique was used to grow AlGaN/GaN HFET layers on silicon 〈111〉 substrates while leaving protected areas of atomically smooth silicon in which MOSFETs are built.
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Chyurlia et al. (2010) studied this question.
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