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A 6-18 GHz high power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two stage corporate amplifier. It has been designed at Indra Sistemas and fabricated on a European foundry using a 0.25 μm process. This HPA exhibits an averaged output power of 39.2 dBm with a mean gain of 11 dB in saturation and a 24.5% maximum power added efficiency in pulse mode operation.
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Oreja-Gigorro et al. (2018) studied this question.