Suppression of the Field Crowding Effect Using White Graphene, High‐ k and Low‐ k Dielectric Stack in p‐Type h‐BN Planar Schottky Barrier Diode

This paper demonstrates the improved breakdown voltage of a p‐type h‐BN Schottky barrier diode (SBD) by incorporating a dielectric stack with high‐ k , low‐ k and 2D h‐BN as the field plate dielectric. The electrical characteristics of the device were studied via 2D simulations performed in Silvaco TCAD. The unterminated device exhibited a breakdown voltage of 578 V for a drift layer thickness of 5 and a doping concentration of , whereas the device with the field plate edge termination technique using a stacked dielectric structure composed of and 2D h‐BN showed a 700 V breakdown voltage. Further, the impact of the thickness of low‐ k and high‐ k dielectrics on the breakdown voltage is studied. The results show that for a low‐ k dielectric, such as the breakdown voltage dropped significantly beyond the 75 nm thickness, whereas a high‐ k dielectric, such as , has shown a monotonic increase in breakdown voltage for the range 25–100 nm. The stack dielectric of and 2D h‐BN with thicknesses of 50 , 25 and 5 nm, respectively, has shown higher rectification. This study presents a systematic approach to select field plate dielectrics for h‐BN SBD devices and serves as a reference for future BN‐based power devices.