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February 10, 2026Open Access

New approaches for radiation transport simulations and rate predictions of SEEs in SOTA microelectronics

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Key Points

This research discusses the application of Monte Carlo methods for improving radiation transport simulations and rate predictions of single-event effects (SEEs) in microelectronics.
Overview of Monte Carlo methods and simulation techniques.
Applications to understand radiation effects in microelectronics.
Connection to the CARRE initiative for enhanced modeling.
Emphasis on Monte Carlo methods increasing simulation accuracy.
Highlight of the relevance to ongoing CARRE efforts in optimizing radiation predictions.

Implication

Overview of Monte Carlo methods applied to radiation effects in microelectronics, suggesting advancements in simulation accuracy.

Abstract

Talk for MRQW 2026. Overview of Monte Carlo methods, their applications to radiation effects, and their relation to the CARRE effort.

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Cite This Study

James Trippe (2026) studied this question.

synapsesocial.com/papers/6a192f2dfab5b468c44188d5 https://doi.org/10.5281/zenodo.20406552

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Keep reading

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1The Center for Advancing the Radiation Resilience of ElectronicsOriginal Research · 2026
2Evaluation of a Simplified Modeling Approach for SEE Cross-Section Prediction: A Case Study of SEU on 6T SRAM Cells2024 · 8 citations
3Research on a General SER Rate Prediction Model Based on a Set of Configuration Parameters Related to SER2025
4Anthology of the Development of Radiation Transport Tools as Applied to Single Event EffectsOriginal Research · 2013 · 72 citations
5SSRESF: Sensitivity-aware Single-particle Radiation Effects Simulation Framework in SoC Platforms based on SVM Algorithm2024

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