Key points are not available for this paper at this time.
To investigate the origin of DRAM variable retention time (VRT), we use test structures and carefully measure the time dependence of leakage current in DRAM. Consequently we find for the first time that the junction leakage current fluctuates just like random telegraph signal. We analyze the leakage current fluctuation in detail and find it the origin of VRT
Mori et al. (Thu,) studied this question.