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A 1024/spl times/1024 integrated image sensor with 8 /spl mu/m pixels, is developed with 3D fabrication in 150 mm wafer technology. Each pixel contains a 2 /spl mu/m/spl times/2 /spl mu/m/spl times/7.5 /spl mu/m 3D via to connect a deep depletion, 100% fill-factor photodiode layer to a fully depleted SOI CMOS readout circuit layer. Pixel operability exceeds 99.9%, and the detector has a dark current of <3 nA/cm/sup 2/ and pixel responsivity of /spl sim/9 /spl mu/V/e at room temperature.
Suntharalingam et al. (2005) studied this question.