Efficient visible light emitting diodes have been fabricated from Ga1-xAlxAs. Epitaxial layers were obtained by a modified solution growth technique. External quantum efficiencies of up to 3.3% have been measured at room temperature on diodes, which had their emission at 1.70 eV. The switching time for the light emission at 300°K was measured to be 60 nsec.
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Rupprecht et al. (1967) studied this question.
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