The modulation of the electrical properties of graphene is essential to realize graphene-based electronics. Boron-doped p-type graphene films with band gaps of ∼50 meV are prepared by chemical vapor deposition using ethanol and boron powder as the precursors. Under AM 1.5 illumination, the p–n junction solar cells made from boron-doped graphene films and n-type silicon show 3.4% conversion efficiency after nitric acid treatment.
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Li et al. (2012) studied this question.
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