We present what we believe to be the first actively Q-switched monolithic microchip laser with a wavelength of 1.55 μm that uses an electro-absorbing semiconductor modulator. At an absorbed pump power of 130 mW and a switching voltage of 2.2 V, the laser produces 470-nJ pulses at a repetition rate of 10 kHz. The output is a stable single longitudinal mode with a center wavelength of 1.553 μm, and the transverse beam profile is close to an ideal Gaussian, with an M2 value of 1.15.
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Hansson et al. (2001) studied this question.
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