Bidirectional voltage biased implication operations using SiOx based unipolar memristors

This work presents a material implication implementation using SiOx based unipolar memristors. SiOx memristors with TaN/SiOx/Si structures have been fabricated, characterized, and used in the implication operation. The implication function and its truth table were well implemented using both positive and negative voltages for load resistor bias. The voltage range for the implication operation is reduced due to bidirectional bias. The key factors for the operation of material implication, such as load resistance, characteristics of the memristor, and design tradeoffs were investigated. This work demonstrates that unipolar SiOx based memristors are suitable for logic operations.