Correlated memory resistor in epitaxial NdNiO3 heterostructures with asymmetrical proton concentration

The electronic devices using correlated transition metal oxides are the promising candidates to overcome the limitation of the current electronics due to the rich electronic phases and the extreme sensitivities. Here, we report proton-based resistive switching memory that uses correlated oxides, i.e., epitaxial NdNiO3 heterostructure with asymmetrical concentration of protons (H+) to obtain multilevel states. By designing such metal-NdNiO3-metal device structures with asymmetrical proton concentration, we demonstrate that the correlated oxides exhibit resistive switching by ionic transport of protons at the metal-hydrogenated NdNiO3 (H-NNO) interface. This finding will guide the development of energy-efficient switching devices for non-volatile memory and neuromorphic applications.