Reduction of contact resistance by selective contact doping in fullerene n-channel organic field-effect transistors

We have investigated the contact-doping effect on high performance n-channel C60 organic field-effect transistors (OFETs) using the air-stable rhodocene dimer as an n-type dopant. The average charge mobility improved from a value of 0.48 cm2/(Vs) in a reference device to 1.65 cm2/(Vs) for contact-doped devices with a channel length of 25 μm. The operational stability of contact-doped OFETs under continuous stress bias was found similar to the reference devices.