This communication describes development of a top gate solution processable organic memory solution. Transistor memories (p-type and ambipolar) operating at voltages between 20 and 30 V with memory on–off ratios close to 103 at programming speeds of 1 ms were fabricated on glass and flexible PET substrates. Successful retention of the stored state for 1 week is also demonstrated.
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Leong et al. (2011) studied this question.
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