We present a domain decomposition approach for the computation of the electromagnetic field within a EUV lithography line mask. We use an additive Schwarz method with transparent boundary conditions at the interfaces of the domains. Light propagation within the multi-layer stack of the EUV mask is treated analytically. This results in a dramatical reduction of the computational costs and allows for the simulation of next generation lithography masks on a standard personal computer.
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Zschiedrich et al. (2005) studied this question.