Today, the main topologies for power conversion for medium voltage applications are mainly determined by the available voltage ratings of the power semiconductor devices. In this paper we shall examine the main existing topologies for medium voltage wind power energy conversion and determine the voltage levels that can be can be achieved with the currently available high voltage semiconductor components such as the IGCT and IGBT. The paper will also provide an insight into development trends for future power semiconductor device concepts with increased power levels and improved overall static and dynamic performance.
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Backlund et al. (2009) studied this question.