Plasma-assisted CVD growth of hetero-epitaxial silicon carbide on silicon

The reduced temperature growth of hetero-epitaxial β-silicon carbide on silicon (100) substrates has been investigated using the technique of RF plasma-assisted chemical vapour deposition in the temperature range 600 to 1200 °C. Silane and ethylene were used as the precursor gases. The lowest temperature at which single crystal growth was obtained in this work is 900 °C. The conditions under which epitaxial growth was obtained at this temperature are described.